unisonic technologies co., ltd 2n3772 silicon npn transistor www.unisonic.com.tw 1 of 3 copyright ? 2012 unisonic technologies co., ltd qw-r205-002,ba silicon npn transistors ? description the utc 2n3772 is a silicon power transistor in to-3 metal case. it is designed for linear amplifiers, series pass regulators, and inductive switching applications. to-3 1 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 2n3772l-t30-y 2N3772G-T30-Y to-3 b e c tray
2n3772 silicon npn transistor unisonic technologies co., ltd 2 of 3 www.unisonic.com.tw qw-r205-002,ba ? absolute maximum rating (t a =25 , unless otherwise specified ) parameter symbol ratings unit collector-base voltage v cbo 100 v collector-emitter voltage v ceo 60 v emitter-base voltage v ebo 7 v collector-emitter voltage v cev 80 v collector current i c 30 a collector peak current (note 1) i cm 30 a base current i b 5 a base peak current (note 1) i bm 15 a power dissipation (t a =25 ) p d 150 w junction temperature t j 150 storage temperature t stg -55 ~ +150 note 1. pulse test: p w <=300 s, duty cycle<=2% 2. absolute maximum ratings are those values bey ond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? electrical characteristics (t a =25 , unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics collector-emitter sustaining voltage v cex ( sus ) i c =0.2a,v be ( off ) =1.5v,r be =100 ? 80 v collector-emitter sustaining voltage v cer ( sus ) i c =0.2a, r be =100 ? 70 v collector-emitter sustaining voltage v ceo ( sus ) i c =0.2a, i b =0 60 v collector cut-off current i ceo v ce =50v,i b =0 10 ma collector cut-off current i cex v ce =100v, v be ( off ) =1.5v. 5 ma v ce =30v, v be(off) =1.5v, t a =150 10 collector cut-off current i cbo v ce =50v, i e =0 5 ma emitter cut-off current i ebo v be =7v, i c =0 5 ma on characteristics dc current gain (note) h fe i c =10a,v ce =4v 15 60 i c =20a, v ce =4v 5 collector-emitter satu ration voltage v ce(sat) i c =10a, i b =1.5a 1.4 v i c =20a, i b =4a 4.0 base-emitter on voltage v be ( on ) i c =10a, v ce =4v 2.2 v second breakdown second breakdown collector with base forward biased i s /b v ce =60v, t=1.0s, non-repetitive 2.5 a dynamic characteristics current gain-bandwidth product f t i c =1a, v ce =4v, f=50khz 0.2 mhz small-signal current gain h fe i c =1a, v ce =4v, f=1khz 40 note: pulse test: p w <=300 s, duty cycle<=2%
2n3772 silicon npn transistor unisonic technologies co., ltd 3 of 3 www.unisonic.com.tw qw-r205-002,ba utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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